Newport Beach, October 1, 2009 – RF Nano Corporation, the leader in developing carbon nanotubes for analog high-frequency electronics, named Michael Schroter Vice President of RF Engineering. Dr. Schroter will lead RF Nano’s device design, characterization, and modeling work addressing the $60 billion analog and mixed signal semiconductor markets.

RF Nano CEO Steffen McKernan said of this key hire: “Michael is one of the very few people in the world who has actually brought new high performance analog devices from concept to commercialization. We are very excited to have him on board as we bring our groundbreaking nanotube based devices to market."

Over more than 25 years, Dr. Schroter has demonstrated a track record of RF device leadership in both academia and industry. After several years in industry where his pioneering RF device modeling at Nortel, Rockwell, and Conexant led to commercial product breakthroughs, he turned his attention back to academia and was appointed Chair of Electron Devices and Integrated Circuits at the Technical University of Dresden, Germany. Adding an appointment as research faculty at the University of California, San Diego, Dr. Schroter standardized the silicon bipolar industry on his HiCuM transistor model through startup XMOD Technologies and has been leading the European DOTFIVE consortium for 0.5 THz SiGe HBT development as its technical program manager.

Dr. Schroter received his Ph.D. in electrical engineering in 1988 from the Ruhr-University Bochum, Germany and has published over 100 technical papers and contributed to several text books. From 2002 to 2008 he was on the Technical Advisory Board of RFMAGIC (now Entropic) and he joined RF Nano’s Technical Advisory Board
two years ago.

“I am very excited to join the talented team at RF Nano”, Schroter said. “The application of carbon nanotube transistors in analog high-frequency circuits will be a disruptive change in technology.”

To read the entire article go to RFnano press release